The Buried Gate MESFET with Turning on Characteristic
Published: 2010
Author(s) Name: Jaya T., Kannan V.
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Abstract
The buried-gate GaAs MESFET with front illumination using turning ON channel current been analyzed by
solving continuity equation. This analysis includes the ion implanted buried-gate process. At time βtβ is equal to
zero, the light through the optical fiber is turning βONβ has been considered. The channel current has been
evaluated and discussed. Buried-gate optical field effect transistor (OPFET) will be highly suitable for microwave
communication.
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