Ultra-thin Gate Oxide Tunneling in MOS Transistors: A Simulation Study
Published: 2014
Author(s) Name: Minimos D. Ghosal, K. K. Ghosh |
Author(s) Affiliation: SRC Institute of Engineering & Management Salt Lake, Kolkata, West Bengal, India
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Abstract
Constant downscaling of gate oxide thickness in present state of art technology in MOS has motivated interest in the eventual tunneling that seriously limits and warns the faithful performance of MOS. In the present paper, with help of existing tunneling models of two very important gate leakage currents like Fowler-Nordheim and Direct tunnel such leakage are successfully simulated by Minimos-NT simulator under different conditions of gate and drain biases and verified the results with the experimental results.
Keywords: N. A.
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